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DTSTAMP:20260412T182721
DTSTART:20161207T110000
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TRANSP:OPAQUE
DTEND:20161207T123000
URL:https://murmitoyen.com/events/vanille/udem/detail/717424-conference-du-
 professeur-david-emslie-mcmaster
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Conférence du Professeur David Emslie (McMaster)
DESCRIPTION:Titre:  Organomanganese Complexes and Reactivity: From Manganes
 e Metal ALD (Atomic Layer Deposition) to Fundamental Reactivity Studies.
\
 nEndroit : Pavillon J.-Armand Bombardier\, salle 1035 à 11 h
\nHôte : Fr
 ank Schaper
\nCette conférence sera prononcée (en anglais)par le Profess
 eur David Emslie du département de chimie de l'Université McMaster.
\nR
 ésumé:
\nALD (Atomic Layer Deposition) is a technique for depositing\, u
 nder mild conditions\, ultrathin films of various materials (e.g. metals\,
  oxides\, sulfides etc.) that that have high thickness uniformity and conf
 orm precisely to the topography of the substrate surface\, as required in 
 future generations of computer microprocessors.1\,2 For example\, a curren
 t Intel microprocessor contains at least 50 of the 81 non-radioactive elem
 ents in the periodic table3 in a variety of different forms\, including pu
 re metals. However\, ALD relies upon surface-based reactions between pairs
  of molecules (different molecules for each target material)\, and for man
 y target materials\, suitable molecules and ALD reactivities have yet to b
 e conceived or developed. This is the case for almost all electropositive 
 metals\, since reactivity must be developed to reduce the metal in a posit
 ive oxidation state\, in an ALD precursor molecule\, to the zero oxidation
  state in the pure element. This seminar will describe (a) our efforts to 
 develop the first methods for manganese metal ALD by harnessing the high r
 eactivity of manganese(II) alkyl4 and allyl5 complexes\, and (b) subsequen
 t fundamental reactivity studies stemming from this ALD research\, with a 
 focus on manganese(I)/(III) complexes with Mn–H and Mn–Si linkages.
\n
 (1) Atomic Layer Deposition of Nanostructured Materials\, Wiley-VCH: Weinh
 eim\, Germany\, 2012.
\n(2) Emslie\, D. J. H.\; Chadha\, P.\; Price\, J. S
 . Coord. Chem. Rev. 2013\, 257\, 3282.
\n(3) C&E News\, June 27\, 2005\, 2
 6.
\n(4) Price\, J. S.\; Chadha\, P.\; Emslie\, D. J. H. Organometallics 2
 016\, 35\, 168.
\n(5) Chadha\, P.\; Emslie\, D. J. H.\; Jenkins\, H. A. Or
 ganometallics 2014\, 33\, 1467.
\nInformation supplémentaireAnnonce PDF d
 e la conférence
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