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URL:https://murmitoyen.com/events/vanille/udem/detail/683595-electrical-con
 tacts-to-two-dimensional-materials-when-less-is-more-xavier-cartoixa-barce
 lona
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Electrical contacts to two-dimensional materials: when less is more
  - Xavier Cartoixà (Barcelona)
DESCRIPTION:Xavier Cartoixà\, Dept. d'Enginyeria Electrònica\, Universita
 t Autònoma de Barcelona
\nIn order for graphene and other two-dimensional
  materials to become competitive players amongst the myriads of electronic
  devices\, one of the main technological hurdles that must be overcome is 
 achieving a low contact resistance (Rc) so that high frequency performance
  is not compromised [1]. For graphene\, it is often quoted that an Rc valu
 e lower than 100 Ω•μm is desirable\, while larger values are thought t
 o be a limiting factor on the graphene field effect transistor performance
  [2\,3]. Recent experiments have achieved this landmark value with a top c
 ontact geometry [4]. On the other hand\, an edge contact has been shown ex
 perimentally to achieve contact resistances with similar or lower values t
 han most top contacts [5]\, challenging the conventional wisdom that havin
 g a large contact area will result in a decreased value of the contact res
 istance.
\nWe will argue that ballistic electron injection into graphene (
 or any other 2D material) is basically a perimeter-dependent phenomenon\, 
 dependent only on the atomistic details of the graphene-metal configuratio
 n at the edge of the metal\, and pretty much independent on the amount of 
 metal-2DM overlap.
\nOur arguments are supported by first principles calcu
 lations of the conductance of a model {Ni\,Al\,Pd}(111)/Graphene contact\,
  where the type of binding (chemi- vs physisorbed) relates to the size of 
 the fluctuations of the transmission curves\, but does not show any clear 
 dependence on the amount of overlap. In fact\, having a large overlapping 
 region between the metal and the 2D material may be detrimental to the goa
 l of a low contact resistance.
\nReferences
\n[1] J. S. Moon and D. K. Gas
 kill\, IEEE Trans. Microwave Theory Tech. 59\, (2011) 2702.[2] A. Venugopa
 l\, L. Colombo and E. M. Vogel\, Appl. Phys. Lett. 96\, (2010) 013512.[3] 
 Bo-Chao Huang\, Ming Zhang\, Yanjie Wang and Jason Woo\, Appl. Phys. Lett.
  99\, (2011) 032107.[4] J. S. Moon\, M. Antcliffe\, H. C. Seo\, D. Curtis\
 , S. Lin et al.\, Appl. Phys. Lett. 100\, (2012) 203512.[5] L. Wang\, I. M
 eric\, P. Y. Huang\, Q. Gao\, Y. Gao et al.\, Science 342\, (2013) 614.
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