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DTSTART:20160208T113000
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URL:https://murmitoyen.com/events/vanille/udem/detail/671734-resistive-swit
 ching-perspectives-and-challenges-n-andreas-rudiger-inrs
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Resistive switching\, perspectives and challenges – Andreas Rüdi
 ger\, INRS
DESCRIPTION:Prof. Andreas Rüdiger\, Institut national de la recherche sci
 entifique\, 1650\, Blvd. Lionel-Boulet\, Varennes (QC) J3X 1S2\, CANADA.
 
\n The interest in resistive switching\, the reversible change of conduc
 tivity as a function of an external electrical signal\, experienced a rena
 issance since little more than a decade driven by demands for future nanoe
 lectronic tiles with versatile use for either memory or logic. With two te
 rminals only\, the integration of these tiles initially focused on passive
  crossbar arrays that soon developed into a research field on their own du
 e to challenges of up-scaling the number of interconnects and the related 
 CMOS overhead. Reports of new materials and new mechanisms underlying the 
 observed resistance hysteresis arrived on an almost daily basis so that th
 e related research soon diversified among materials\, mechanisms and circu
 itry in an ever since growing research community.
\nWhile the initial stru
 cture is generally a metal-insulator-metal (MIM) stack\, the sheer number 
 of scenarios that lead to resistive switching requires a subdivision into 
 categories. So the first part of this presentation will be dedicated to di
 fferent mechanisms of resistive switching\, the most common material syste
 ms and to the most important circuitry considerations\, which immediately 
 leads to a pre-selection about mechanisms and materials for applications i
 n semiconductor industries.
\nThe second part of this presentation will de
 al with results from our own group related to binary and ternary oxides fo
 r highly integrated resistively switching thin films ranging from TiO2\, a
  valency change material and early contender in resistive switching\, to n
 anoporous SiO2\, a conductive bridge material suitable for printable elect
 ronics to ultrathin ferroelectric films of only a few unit cell thickness 
 to act as ferroelectric tunnel junctions. All discussion will be based on 
 the additional value that these concepts offer to existing technologies an
 d to the possibility of scaling regarding size\, energy and speed.
\nSite 
 web du groupe du Prof. Rüdiger
\n 
\nCette conférence est présentée 
 par le RQMP Versant Nord du Département de physique de l'Université de
  Montréal et le Département de génie physique de Polytechnique Montr
 éal.
\n 
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