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UID:69de1407678fb
DTSTAMP:20260414T061639
DTSTART:20150819T113000
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URL:https://murmitoyen.com/events/vanille/udem/detail/623351-lattice-locati
 on-of-dopants-in-group-iii-nitrides-and-zno-n-andre-vantomme-ku-leuven
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Lattice location of dopants in group-III nitrides and ZnO – Andr
 é Vantomme\, KU Leuven
DESCRIPTION:André Vantomme\, Instituut voor Kern- en Stralingsfysica\, Ce
 lestijnenlaan 200d - bus 2418\, B-3001 Heverlee\, Belgium
\nThe properti
 es (electric\, optic\, and magnetic) of impurities and dopants in semicond
 uctors are strongly dependent on the lattice sites which they occupy. Alth
 ough the main occupied site\, for a given impurity-host combination\, can 
 often be predicted based on chemical similarities between impurity and hos
 t elements\, such expectations fail in many cases. Furthermore\, minority 
 sites (in case of multiple-site occupancy) are even more difficult to pred
 ict\, detect and identify. In this talk\, we give an overview of recent la
 ttice location studies for impurities and dopants in ZnO and GaN\, as repr
 esentative wide-gap semiconductors. These experiments are based on the emi
 ssion channeling (EC) technique\, using radioactive isotopes produced at t
 he ISOLDE facility at CERN. EC makes use of the charged particles emitted 
 by a radioactive isotope upon decay. The screened Coulomb potential of ato
 mic rows and planes determines the anisotropic scattering of the particles
  emitted isotropically during the radioactive decay. Along low-index direc
 tions of single crystals and epitaxial films\, this anisotropic scattering
  results in well defined channeling or blocking effects. Because these ef
 fects strongly depend on the initial position of the emitted particles\, t
 hey result in emission patterns which are characteristic of the lattice si
 te(s) occupied by the probe atoms. In this talk\, we present some particul
 ar cases that illustrate the strengths of emission channeling when studyin
 g systems exhibiting multiple-site occupancy.  
\nSite web du groupe du P
 r Vantomme
\n 
\nCette conférence est présentée par le RQMP Versant No
 rd du Département de physique de l'Université de Montréal et le Dép
 artement de génie physique de Polytechnique Montréal.
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