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PRODID:https://murmitoyen.com/events/vanille/udem/
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UID:69df0b0382717
DTSTAMP:20260414T235027
DTSTART:20150112T113000
SEQUENCE:0
TRANSP:OPAQUE
DTEND:20150112T123000
URL:https://murmitoyen.com/events/vanille/udem/detail/360950-ion-beams-for-
 light-emitting-silicongermanium-quantum-structures-lyudmila-goncharova-wes
 tern-u
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Ion beams for light emitting silicon/germanium quantum structures -
  Lyudmila Goncharova (Western U.)
DESCRIPTION:Lyudmila Goncharova\, Department of Physics and Astronomy\, We
 stern University\, Canada Light emission from Si and Ge quantum structures
  has been a focus of research due to the need to silicon-based light sourc
 es in opto-electronic and photonic applications. We employ advanced method
 s of nanomaterials growth\, such as ion beam implantation and molecular be
 am epitaxy (MBE) to prepare light emitting Si/Ge quantum structures. We co
 mpare Si QDs prepared in silicon oxide and silicon nitride and discuss the
 ir potentials for application in light emitting devices. There is a relati
 onship between the preparation method of Si and Ge quantum structures\, an
 d the structural\, electronic\, and optical properties in terms of strengt
 h of quantum confinement (QC). A relatively simple model of QC\, using a '
 particle-in-a-box'-type perturbation to the effective mass theory\, was ap
 plied to Si and Ge quantum wells\, wires and dots across a variety of prep
 aration methods. The choice of the model was made in order to distinguish 
 contributions that are solely due to the effects of QC\, where the only va
 ried experimental parameter was the crystallinity.  We also developed a r
 eproducible route of horizontal (lateral) Si wire growth using molecular b
 eam epitaxy on the Si(001) surface. We show that at a sufficiently low flu
 x of Si atoms and high substrate temperature\, gold droplets are propelled
  forward horizontally along two orthogonal <011> directions by the growing
  silicon wires. The reticular growth closely resembles a self-avoiding ran
 dom walk in two dimensions\, as we confirmed by using a Monte Carlo simula
 tion. We present the experimental results and thermodynamic arguments show
 ing the unique role carbon plays in initiating lateral growth of Si wires 
 on a Si (100) substrate and discuss the means of kinetic control of the gr
 owth process. Linear growth of lateral Si wires from placed gold seeds can
  be used to produce interconnections between the two metal electrodes depo
 sited on the surface. Alternatively\, Si wire networks can be used for imp
 roving efficiency in solar cells since they lead to broadband antireflecti
 on as well as enhanced light trapping efficiency. Voici le lien vers la pa
 ge web du groupe de recherche de Mme Goncharova. Cette conférence est pr
 ésentée par le RQMP Versant Nord du Département de physique de l'Unive
 rsité de Montréal et le Département de génie physique de Polytechnique
  Montréal.
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