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DTSTAMP:20260411T143927
DTSTART:20180508T140000
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URL:https://murmitoyen.com/events/vanille/udem/detail/819196-strain-and-cur
 vature-engineering-of-electronic-properties-in-atomic-layer-materials-susu
 mu-saito-tokyo-institute-of-technology
LOCATION:Université de Montréal - Pavillon Roger-Gaudry\, 2900\, chemin d
 e la Tour\, Montréal\, QC\, Canada\, H3T 1J6
SUMMARY:Strain and curvature engineering of electronic properties in atomic
 -layer materials - Susumu Saito (Tokyo Institute of Technology)
DESCRIPTION:Strain and curvature engineering of electronic properties in at
 omic-layer materialsSusumu SaitoDepartment of PhysicsAdvanced Research Cen
 ter for Quantum Physics and Nanoscience\, and Materials Research Center fo
 r Element StrategyTokyo Institute of Technology\, Japan
\n 
\nAbstract: E
 lectronic properties of carbon nanotubes are known to depend not only on t
 he network topology (chirality and formal radius) but also on the detailed
  values of geometrical parameters. The latter gives rise to open the possi
 bilities for strain engineering of their electronic properties. I will add
 ress the geometry-dependent electronic properties of BN nanotubes and tran
 sition-metal-dichalcogenide (TMD) nanotubes as well as those of hexagonal 
 BN (h-BN) sheet and TMD sheets\, and discuss the possibilities of strain a
 nd curvature engineering of these materials. In the case of h-BN atomic la
 yers\, modifications of the ionization energies of substitutional impuriti
 es by strain and curvature are found to be sizable\, and the material is p
 roven to be a promising candidate for future nanoelectronics device materi
 al.
\n 
\nLink to Prof. Saito's web page
\n 
\nCette conférence est pr
 ésentée par le RQMP Versant Nord du Département de physique de l'Un
 iversité de Montréal et de Génie physique de la Polytechnique.
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