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BEGIN:VEVENT
UID:69dc02e2b1a73
DTSTAMP:20260412T163858
DTSTART:20170206T113000
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URL:https://murmitoyen.com/events/vanille/udem/detail/740382-synthesis-usin
 g-advanced-plasma-processing-and-high-power-impulse-magnetron-sputtering-u
 lf-helmersson-linkoping-university-sweden
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Synthesis using advanced plasma processing and High Power Impulse M
 agnetron Sputtering - Ulf Helmersson (Linkoping University\, Sweden)
DESCRIPTION:Synthesis of thin films\, nanoparticles and complex nanostructu
 res using advanced plasma processing and High Power Impulse Magnetron Sput
 tering (HiPIMS).Ulf Helmersson\, professor in Thin Film Physics (IFM) he
 ad of the Plasma & Coatings Physics division at Linköping University (LiU
 )\, Swedenabstract:The use of high-power pulses for synthesis of nanopar
 ticles and thin films is of interest because of the effective ionization o
 f the supplied gases and the sputtered source material. For nanoparticle s
 ynthesis\, the advantage of ionizing the source material is the effective 
 trapping of positive ions onto the negatively charged nanoparticles in the
  plasma resulting in a significant increase in growth rate and utilization
  of material. For the thin film synthesis\, the advantage of the ionizatio
 n of the deposition material is the controllability of the arrival energy 
 of the growth species making denser coatings grown at low synthesis temper
 atures possible. This presentation will first give an introduction to the 
 nanoparticle synthesis technique. The second subject\, regarding thin film
  synthesis\, will be focused on reactive sputter control using the current
  pulse peak shape as an analysis parameter and the pulse frequency as the 
 control parameter.Prof. Helmersson bio:Dr. Ulf Helmersson\, head of the 
 Plasma & Coatings Physics division at Linköping University (LiU)\, has fo
 cused his research on the complex relationship among thin film growth kine
 tics\, microstructural evolution\, and physical properties. He has made si
 gnificant contributions in all areas. Early in his career he worked on the
  growth of hard transition metal nitride thin films by magnetron sputterin
 g and\, in particular\, the role of low energy ion irradiation during depo
 sition.  He grew the first man-made artificial 'super-hard' material — 
 single crystal TiN/VN superlattices — with hardness comparable to diamon
 d. His ground-breaking work on super-hard multilayers spawned a global i
 ndustry and his results on the atomistic understanding of ion/surface inte
 ractions during the dynamic process of crystal growth is the basis of much
  of what we know in this important field today.As a professor at LiU\, Ul
 f continued his hard-coating work\, but also started a new effort in perov
 skite-structure high temperature superconductor and ferroelectric oxides.
   In this case he contributed significantly using his atomistic understan
 ding\, in combination with high-resolution electron microscopy and physica
 l property measurements\, to understand the role of O- negative ion bombar
 dment during oxide film growth by magnetron sputtering.  His understandin
 g\, together with strategies to either mitigate the effects (when deleteri
 ous\, i.e. for materials with low bulk atom displacement thresholds) or to
  utilize them for property enhancement\, is well known in the oxide commun
 ity.Over the last several years\, Ulf has truly pioneered the development
  of High Power Impulse Magnetron Sputtering (HiPIMS)\, the most significan
 t development in physical vapor deposition over the last decade.  He co-a
 uthored the first paper in that field and\, in cooperation with plasma sci
 entists in Stockholm and Iceland and many other scientists\, several extre
 mely important and highly cited papers concerning the science and function
 ality of HiPIMS.Cette conférence est présentée par le RQMP Versant N
 ord du Département de physiquede l'Université de Montréal et de Géni
 e physique de la Polytechnique.
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