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DTSTAMP:20260416T025016
DTSTART:20131021T113000
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DTEND:20131021T123000
URL:https://murmitoyen.com/events/vanille/udem/detail/287848
LOCATION:Université de Montréal - Pavillon J.-Armand-Bombardier\, 5155\, 
 chemin de la rampe \, Montréal\, QC\, Canada\, H3T 2B2
SUMMARY:Exciton fission via ultrafast long-range resonant tunnelling in org
 anic photovoltaic diodes – Eric Bittner\, U Houston
DESCRIPTION:Eric Bittner\, John and Rebecca Moores Professor\, Department
  of Chemistry\, University of Houston\, Houston\, Texas 77204-5003\, USA
 We present an exciton/lattice model of the electronic dynamics of primary 
 photoexcitations in a polymeric semiconductor heterojunction which include
 s both polymer π-stacking\, energetic disorder\, and phonon relaxation. R
 esults from our model are consistent with a wide range of recent exper- im
 ental evidence that excitons decay directly to well-defined polarons on a 
 sub-100 fs timescale\, which is substantially faster than exciton relaxati
 on processes. Averaging over multiple samples\, we find that as the interf
 acial offset is increased\, a substantial fraction of the density of elect
 ronic states in the energy region about the initial exciton carries signif
 icant charge-transfer character with two charges separated in the outer re
 gions of the model lattice. The results indicate a slight increase in the 
 density of such current-producing states if the region close to the interf
 ace is more disordered. However\, since their density of states overlaps t
 he excitation line-shape of the primary exciton\, we show that it is possi
 ble that the exciton can decay directly into current-producing states via 
 tunneling on an ultrafast time-scale. We find this process to be independe
 nt of the location of energetic disorder in the system\, and hence we expe
 ct exciton fission via resonant tunnelling to be a ubiquitous feature of t
 hese systems. Site web du groupe du  Prof. BittnerCette conférence est 
 présentée par le RQMP Versant Nord du Département de physique de l'Uni
 versité de Montréal et le Département de génie physique de Polytechniq
 ue Montréal.
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